Author(s)

Wang Yuecheng ¹

Affiliation(s)

¹ Armed Police Non-commissioned Officer School, Hangzhou, China

Corresponding Author

Wang Yuecheng

ABSTRACT

In the architecture of the communication network, the signal passes through various devices and finally reaches the destination terminal. This involves relaying and amplifying the signal, and the power amplifier is the core device in this process and the foundation of the communication system. With the continuous development of communication technology, spectrum resources are becoming increasingly tight, and the principle of fixed frequency band allocation has resulted in underutilized spectrum resources. To make full use of spectrum resources, the realization of the reconfigurable capability of power amplifiers will be studied in the future Focus. Then introduced a power amplifier designed by using Smith chart matching of GaN devices. The reconfigurable aspects of the designed power amplifier are studied. The use of PIN diodes enables the design of reconfigurable switches. Simulate the reconfigurable matching network, through the analysis of the simulation results, realize the switch function, and meet the design requirements. Finally, the input and output matching network and the reconfigurable matching network are tuned and optimized. The simulation results show that the power amplifier can switch between 1680MHz, 1935MHz, and 2040MHz frequency bands, the output power can reach 40-43dBm, and the efficiency is 70%-80%.

KEYWORDS

Power amplifier; GaN device; PIN switch; Reconfigurable; Multi-band

CITE THIS PAPER

Wang Yuecheng, Design of Reconfigurable Power Amplifier Based on Smith Chart Matching. Journal of Electronics and Information Science (2023) Vol. 8: 56-66. DOI: http://dx.doi.org/10.23977/10.23977/jeis.2023.080108.

REFERENCES

[1] Chen Shiqi. Overview of key technologies for the transformation of new telecommunication networks [J]. Information and Communications, 2017 (02): 181-183. 
[2] Huang Haifeng. The initial period of 4.5G has passed and will usher in explosive growth [J]. Communications World, 2016, 06: 36-38. 
[3] Tian Guibin, Xu Yong. 4.5G technology introduction and deployment strategy [J]. Telecommunications Science, 2016, S1: 12-17. 
[4] Guolin Sun, Rolf H. Jansen. Broadband Doherty Power Amplifier via Real Frequency Technique [J]. IEEE Transactions on Microwave Theory and Techniques, 2012, VOL. 60:99-111. 
[5] Atsushi Fukuda, Kunihiro Kawai, Takayuki Furuta, Hiroshi Okazaki, Sinya Oka, Shoichi Narahashi, Atsushi Murase. A High Power and Highly Efficient Multi-band Power Amplifier for Mobile Terminals[C]. IEEE Radio and Wireless Symposium (RWS), 2010.
[6] Rebeiz G M, Muldavin J B. RF MEMS switches and switch circuits [J]. Microwave Magazine, IEEE, 2001, 2(4): 59-71. 
[7] Qiao D., et al. An intelligently controlled RF power amplifier with a reconfigurable MEMS-varactor tuner. IEEE Transactions on Microwave Theory and Techniques, 2005. 53(3 II): p. 1089-1094.
[8] Liu Hui, Yang Xinmi. Extraction of RF Characteristic Parameters of Varactor Diodes [J]. Communications Technology, 2013 (007): 141-143. 
[9] Ali F., et al. Tunable multiband power amplifier using thin-film BST varactors for 4G handheld applications, in 2010 IEEE Radio and Wireless Symposium, RWW 2010 - Paper Digest. 2010: New Orleans, LA, United States. p. 236-239. 
[10] Neo W. C. E., Y. Lin, X. Liu, L.C.N. de Vreede, L.E. Larson, M. Spirito, M.J. Pelk, K. Buisman, A.Akhnoukh, and A. de Graauw, Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. Solid-State Circuits, IEEE Journal of, 2006. 41(9): p.2166-2176. 
[11] Hur J., et al. A Multi-Level and Multi-Band Class-D CMOS Power Amplifier for the LINC System in the Cognitive Radio Application. Microwave and Wireless Components Letters, IEEE, 2010. 20(6): p.352-354.
[12] Kaynak M., et al. Performance comparison of a single and multiband power amplifiers using IHP 0.25 m Si Ge HBT technology. International Journal of RF and Microwave Computer-Aided Engineering, 2009. 19(4): p. 434-442. 
[13] A. Fukuda, H. Okazaki, T. Hirota, and Y. Yamao. Novel 900MHZ/1.9GHz Dual-Mode Power Amplifier Employing MEMS Switches for Optimum Matching[C]. IEEE Microwave Wireless Compon. Lett, 2004, 14:121–123 
[14] A. Fukuda, T. Furuta, and T. Hirota. A 0.9-5 GHz Wide-Range 1W-Class Reconfigurable Power Amplifier Employing RF-MEMS Switches[C]. IEEE MTT-S Int, Microwave Symp.Dig, June 2006: 1859-1862. 
[15] Singh R, Cooper Jr J A, Melloch M R, et al. Si C power Schottky and Pi N diodes[J]. Electron Devices, IEEE Transactions on, 2002, 49(4): 665-672.

Sponsors, Associates, and Links

---

• Information Systems and Signal Processing Journal
  
  
• Intelligent Robots and Systems
  
  
• Journal of Image, Video and Signals
  
  
• Transactions on Real-Time and Embedded Systems
  
  
• Journal of Electromagnetic Interference and Compatibility
  
  
• Acoustics, Speech and Signal Processing
  
  
• Journal of Power Electronics, Machines and Drives
  
  
• Journal of Electro Optics and Lasers
  
  
• Journal of Integrated Circuits Design and Test
  
  
• Journal of Ultrasonics
  
  
• Antennas and Propagation
  
  
• Optical Communications
  
  
• Solid-State Circuits and Systems-on-a-Chip
  
  
• Field-Programmable Gate Arrays
  
  
• Vehicular Electronics and Safety
  
  
• Optical Fiber Sensor and Communication
  
  
• Journal of Low Power Electronics and Design
  
  
• Infrared and Millimeter Wave
  
  
• Detection Technology and Automation Equipment
  
  
• Journal of Radio and Wireless
  
  
• Journal of Microwave and Terahertz Engineering
  
  
• Journal of Communication, Control and Computing
  
  
• International Journal of Surveying and Mapping
  
  
• Information Retrieval, Systems and Services
  
  
• Journal of Biometrics, Identity and Security
  
  
• Journal of Avionics, Radar and Sonar