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Temperature Field Study and Numerical Simulation of the Power Device of the MOSFET

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DOI: 10.23977/iceccs.2018.013

Author(s)

Xu Jianning, Feng Lei, Zhu Duanyin

Corresponding Author

Xu Jianning

ABSTRACT

This paper is based on the principle of electric drive automatic control system and the working principle of power electronics technology _MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), introduced the application of the power device MOSFET in the motor driver and the power loss calculation method of the power device of the MOSFET. Use the finite element software ANSYS/Fluent module for numerical simulation, in addition, the heat conduction process of the energy loss produced by the MOSFET as the inverter power device of the motor driver is discussed. The influence of the height and width of the channel section on the temperature rise of the MOSFET is obtained by changing the size of the cooling channel.

KEYWORDS

MOSFET, Motor driver, Power loss, Temperature field, Numerical simulation

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