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Controlled Growth of Si Nanowires at Low Temperature via the Solid-Liquid-Solid Mechanism

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DOI: 10.23977/amce.2019.050


Shiyu Zhang, Weibin Rong, Zhichao Pei, Tao Zou, and Lining Sun

Corresponding Author

Shiyu Zhang


This paper provides a novel prospect of low-temperature SLS growth. Large quantities of Si nanowires were manufactured at 600°C under a N2 atmosphere on an N-type Si (100) substrate. Two-dimensional (2D) structures of Si nanowire clusters were gained, by writing the liquid metal ink with especially-designed micropipe pen on the Si wafer, deposited with a gold layer (thickness: ~10 nm). The diameter of the Si nanowire clusters with dot feature and the width of lines can be varied between 500 nm and 50 μm by changing the size of micropipe pen.


Si nanowires, low-temperature SLS growth, patterning, mixed catalyst

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