Author(s)

Yu Chen Li

Corresponding Author

Yu Chen Li

ABSTRACT

In this paper, a new H2 gas sensor based on FD-SOI PNIN TFET with Palladium metal gate is proposed through simulation-based study. The transfer characteristics and the H2 gas sensitivities of the proposed sensor at various gas pressure are studied. FD-SOI PNIN TFET H2 sensor exhibits superior sensitivity in contrast with FD-SOI TFET H2 sensor due to the integration of the narrow N+ layer at the source side. The effect of substrate bias on the sensitivity of FD-SOI PNIN TFET H2 sensor also has been studied. It is finally proposed that designers can use the substrate bias to improve the sensitivity of FD-SOI PNIN TFET H2 sensor.

KEYWORDS

H2 gas sensor; FD-SOI; TFET; sensitive