Design of RF Bulk Acoustic Wave Duplexer for UMTS-1 Band
Download as PDF
DOI: 10.23977/cnci2021.014
Author(s)
Bai Yuhui, Ren Jiatai, Chen Jianming, Chu Hequn, Wang Rui, Cheng Pengguang
Corresponding Author
Chen Jianming
ABSTRACT
The performance of RF resonant circuit is improved by adding inductor in the
circuit. Firstly, according to the equivalent circuit of a single lossless film bulk acoustic
resonator (FBAR), the resonant frequency and anti-resonant frequency formulas of the
resonator are derived. According to the expressions, the principle of improving circuit
performance by series parallel inductors is studied. Secondly, considering that too large
inductor will bring great challenges to the subsequent process, the inductor size is optimized
through Π-T transformation principle. Based on this research, another mobile duplexer is
designed for umts-1 band (transmitting band: 1920-1980mhz, receiving band: 2110- 2170MHz). The insertion loss of transmitting filter and receiving filter is better than 2dB, and the isolation of transmitting filter and receiving filter is greater than 58db and 77db
respectively.
KEYWORDS
Thin film bulk acoustic resonator, resonant frequency, duplexer, Π-T transformation