Design Optimization of α SiC based ATT diode for harmonic mode operation
DOI: 10.23977/jptc.2019.21005 | Downloads: 8 | Views: 589
Debraj Chakraborty 1, Moumita Mukherjee 2
1 Department of ECE,Pailan Colllege of Management & Technology, Kolkata-700104, West Bengal, India
2 Department of Physics, Adamas University, Kolkata-700126, West Bengal, India
Corresponding AuthorDebraj Chakraborty
The paper deals with design and analysis of Si/4H-SiC superlattice based Avalanche Transit time (ATT) device operating at Terahertz frequency region. A generalised non-linear quantum drift diffusion model is developed for the analysis. The authors have studied the higher harmonic effects on the high frequency performances. It is observed that due to the superlattice structure, the device is capable of generating a considerable amount of power (~100 mW) even at 3rd harmonic oscillation. The device is oscillating at fundamental mode of frequency ~ 0.5 THz with an efficiency of ~ 10% The authors have made the analysis realistic by incorporating the temperature dependent carrier ionization rate, saturation drift velocity, mobility and effective mass. To the best of authors’ knowledge, this is the first report on higher THz region harmonic analysis of Si/4H-SiC superlattice-ATT device.
KEYWORDSAvalanche Transit Time Device, Harmonic power generation, Terahertz source, Quantum corrected drift diffusion model, Large signal non-linear model.
CITE THIS PAPER
Debraj Chakraborty, Moumita Mukherjee, Design Optimization of α SiC based ATT diode for harmonic mode operation, Journal of Physics Through Computation (2019) Vol. 2: 21-25. DOI: http://dx.doi.org/10.23977/jptc.2019.21005.
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