Effects of Optical Irradiation on III-V Avalanch Photo Diodes
DOI: 10.23977/jptc.2019.21006 | Downloads: 53 | Views: 3725
Ajanta Palit 1, Karabi Ganguly 2, Moumita Mukherjee 3
1 Department of Electronics and communication Engineering , Bengal Institute of Technology, Maulana Abul Kalam Azad University (MAKAUT) WseBengal , India
2 Department of Biomedical Engineering , Jis College of Engineering (an autonomous University), WestBengal, India
3 Department of Physics, Adamas University, Kolkata. India
Corresponding AuthorAjanta Palit
RF properties and avalanche noise generation in opto sensitive GaN/ AlGaN avalanche photo diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical radiation, which opens the prospects of RF tuning and it’s use as a low noise optical detector.
KEYWORDSAPD Avalanche Photodiode, Optical irradiation, efficiency.
CITE THIS PAPER
Ajanta Palit, Karabi Ganguly, and Moumita Mukherjee, Effects of Optical Irradiation on III-V Avalanch Photo Diodes, Journal of Physics Through Computation (2019) Vol. 2: 26-29. DOI: http://dx.doi.org/10.23977/jptc.2019.21006.
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