Author(s)

Ajanta Palit ¹, Karabi Ganguly ², Moumita Mukherjee ³

Affiliation(s)

¹ Department of Electronics and communication Engineering , Bengal Institute of Technology, Maulana Abul Kalam Azad University (MAKAUT) WseBengal , India
² Department of Biomedical Engineering , Jis College of Engineering (an autonomous University), WestBengal, India
³ Department of Physics, Adamas University, Kolkata. India

Corresponding Author

Ajanta Palit

ABSTRACT

RF properties and avalanche noise generation in opto sensitive GaN/ AlGaN avalanche photo diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical radiation, which opens the prospects of RF tuning and it’s use as a low noise optical detector.

KEYWORDS

APD Avalanche Photodiode, Optical irradiation, efficiency.

CITE THIS PAPER

Ajanta Palit, Karabi Ganguly, and Moumita Mukherjee, Effects of Optical Irradiation on III-V Avalanch Photo Diodes, Journal of Physics Through Computation (2019) Vol. 2: 26-29. DOI: http://dx.doi.org/10.23977/jptc.2019.21006.

REFERENCES

[1] Kimoto T, Yamamoto T, Chen Z Y, Yano H, Matsunami H, (2001). “Chemical vapor deposition and deep level analysis of 4H-SiC (1,1,-2,0)”, J. Appl. Phys., 89, 11,  6105-6109
[2] Kundu A, Mukherjee M, (2019)”Physics based non-linear large signal analysis of multiple-graphene layer exotic pin devices and ultra-fast SPST/SPDT/SPMT switches on Si/3C-SiC(100) substrates for application in THz-communication, doi: 10.1007/s00542-019-04325-2
[3] Electronic Archive: New Semiconductor Materials, Characteristics and Properties (online) www.ioffe.ru/SVA/NSM/Semicond.
[4] Kundu A, Kanjilal M, Das A, Kundu J, Mukherjee M, (2013), Cubic structure Si pin diode as RF switch, International Conference, IET, 119-121
[5] L Yuan, “Development of Silicon Carbide IMPATT oscillators, (2000), Ph.D. thesis, Purdue University, Faculty of Electrical Engineering, Purdue, USA. 

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