Design and Characterize the GaN/AlGaN Asymmetrical Super-lattice Exotic pin Photo-Sensor in Visible Wavelength
DOI: 10.23977/jptc.2019.21008 | Downloads: 24 | Views: 860
Abhijit Kundu 1, Debraj Modak 2, Jhuma Kundu 3, Moumita.Mukherjee 4
1 Govt.Engg.College, Chaibasa, Jharkhand, India
2 Abacus inst. of Engg. & Management, Mogra, India
3 NSHM Knowledge Campus, Durgapur, India
4 Adamas University, Kolkata, India
Corresponding AuthorAbhijit Kundu
In this paper, the super-lattice GaN/AlGaN single and array type photo sensor has been designed and simulated through the Quantum Modified Drift-Diffusion (QMDD) simulator in visible wavelength region (300nm-800nm). The photo sensor has been demonstrated with significant photo responsibility and quantum efficiency and the result of single photo sensor are compared with its array type photo sensor in between 300nm-800 nm wavelength region. To the best of author’s knowledge, this is the first report on GaN/AlGaN super-lattice photo sensor in visible wavelength of optical illumination.
KEYWORDSGaN/AlGaN, super-lattice, QMDD, Quantum Efficiency.
CITE THIS PAPER
Abhijit Kundu, Debraj Modak, Jhuma Kundu, Moumita.Mukherjee, Design and Characterize the GaN/AlGaN Asymmetrical Super-lattice Exotic pin Photo-Sensor in Visible Wavelength, Journal of Physics Through Computation (2019) Vol. 2: 37-40. DOI: http://dx.doi.org/10.23977/jptc.2019.21008.
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