Author(s)

Yunpeng Tao ¹, Minglong Li ², Junzhe Wang ³

Affiliation(s)

¹ Beijing 39 Middle School, No. 6, Xicheng Gen North Street, Xicheng District, Beijing, China
² High School Affiliated to Chengdu Institute of Education Sciences, No. 1888, Tianfu 3rd Street, High-tech Zone, Chengdu, Sichuan, China
³ Nanjing No. 1 Middle School, No. 301, Zhongshan South Road, Qinhuai District, Nanjing, China

Corresponding Author

Yunpeng Tao

ABSTRACT

The charge collection characteristics of silicon carbide detectors in the field of high time resolution detection are studied in this paper. Aiming at the limitations of traditional silicon detectors in high temperature and high radiation environment, a high time resolution detector design based on 4H-SiC material is proposed. Due to its wide band gap, high carrier mobility, and excellent radiation resistance, 4H-SiC is ideal for extreme detection environments. By optimizing the process, high charge collection efficiency (CCE) and excellent temporal resolution were achieved, with CCE reaching 90% and temporal resolution reaching 35±0.2ps at 100V reverse bias. The experimental results show that the SiC detector has a series of excellent properties compared with the silicon-based detector. In addition, the charge collection characteristics of SiC detectors with different bias and the saturation behavior of charge collection in the range of 150~350V are also discussed. Finally, the application prospects of SiC detector in nuclear radiation monitoring, medical imaging and space exploration are prospected. With the advancement of technology and the reduction of cost, SiC detectors will demonstrate their unique value in more fields.

KEYWORDS

Silicon carbide detectors, high time resolution, charge collection efficiency, physical vapor deposition, radiation resistance

CITE THIS PAPER

Yunpeng Tao, Minglong Li, Junzhe Wang, Characterization of Charge Collection Properties of High Time-Resolution Silicon Carbide Detectors. Journal of Electrotechnology, Electrical Engineering and Management (2024) Vol. 7: 132-140. DOI: http://dx.doi.org/10.23977/jeeem.2024.070217.

REFERENCES

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[3] Yuanyuan Song, De Song, Ye Li, Weijun Chen, Chunyang Liu. Influence of Passivation Layer and P Type Base Structure Optimization on Charge Collection Efficiency of Electron Bombardment Active Pixel Sensor. Chinese Journal of Lasers, 2023, 50(18): 1803001.
[4] Y. Wang, Z. Wang, Y. Xu, Y. Zhang, et al., High Charge Collection Efficiency in SiC Detectors: A Review. Journal of Applied Physics, vol. 123, no. 4, pp. 045001, 2023.2.
[5] S. Chen, M. Liu, Q. Zhang, et al., Characterization of 4H-SiC Low-Gain Avalanche Diodes for High-Energy Physics Applications. IEEE Transactions on Nuclear Science, vol. 70, no. 1, pp. 98-105, 2024.
[6] R. Li, J. Wang, L. Sun, et al., Performance Evaluation of SiC-Based Radiation Detectors in Extreme Environments. Journal of Materials Science, vol. 59, no. 2, pp. 112-121, 2024.
[7] K. Zhang, L. Yang, H. Chen, et al., Advancements in SiC Power Devices and Their Applications in Electric Vehicles. Power Electronics Review, vol. 15, no. 3, pp. 55-64, 2024. 
[8] J. Zhao, M. Wang, H. Liu, et al., GaN RF Devices Based on SiC Substrates for 5G Applications. IEEE Microwave and Wireless Components Letters, vol. 32, no. 5, pp. 342-349, 2024.

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