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  4. Vol 8, Issue 1, 2025

Simulation of 2D Axisymmetric GaAs P-N Junction Infrared LED and Study on Spatial Distribution of Emissivity

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DOI: 10.23977/jeeem.2025.080118 | Downloads: 1 | Views: 16

Author(s)

Shaolong Liu 1, Wen Li 1, Xinyu Miao 2, Tiansheng Sun 1

Affiliation(s)

1 School of Electrical Engineering, Yingkou Institute of Technology, Yingkou, 115000, China
2 Yingkou Abe Wiring Co., Ltd., Yingkou, 115000, China

Corresponding Author

Wen Li

ABSTRACT

To investigate the electrical characteristics and light emission laws of gallium arsenide (GaAs) P-N junction infrared light-emitting diodes (LEDs), particularly the influence of the spatial distribution of emissivity on device efficiency, this study adopts a 2D axisymmetric modeling approach for simulation. The device is based on a 60μm-diameter circular GaAs chip, and the 2D model is simplified to a rectangular structure with a thickness of 10μm and a width of 30μm. The top 2.5μm layer is p-type doped (concentration: 1×10¹⁸ cm⁻³), while the bottom 7.5μm layer is n-type doped (concentration: 1×10¹⁸ cm⁻³). The Auger recombination non-radiative mechanism is introduced to simulate the efficiency degradation process. The simulation first uses a "semiconductor initialization study" to automatically refine the mesh around the P-N junction, followed by a steady-state study with a bias voltage scan from 0 V to 1.5 V to analyze the current-voltage (I-V) characteristics, spatial distribution of emissivity, and variation law of internal quantum efficiency (IQE). The results show that: the turn-on voltage of the device is approximately 1.2 V; under low current (<5 mA, corresponding to a bias voltage of 1.2-1.3 V), the emission is distributed uniformly across the entire p-type layer, and the IQE remains at a high level; under high bias voltage (e.g., 1.5 V), the emission concentrates beneath the central p-type contact, the total emissivity increases sublinearly with current, and the IQE drops sharply to 0.075 as current increases (attributed to the Auger recombination rate being proportional to the cube of carrier density, which enhances the proportion of non-radiative recombination). The 2D axisymmetric modeling significantly reduces the computational load while accurately capturing the key performance laws of the device. The research results provide a basis for the design optimization of household infrared devices (such as remote controls and night-vision cameras): a bias voltage of 1.2-1.3 V can be selected for low-power scenarios, and transparent p-type contacts or annular contact designs are required to improve light extraction efficiency for high-brightness scenarios.

KEYWORDS

GaAs P-N Junction; Infrared LED; 2D Axisymmetric Modeling; Spatial Distribution of Emissivity; Auger Recombination

CITE THIS PAPER

Shaolong Liu, Wen Li, Xinyu Miao, Tiansheng Sun, Simulation of 2D Axisymmetric GaAs P-N Junction Infrared LED and Study on Spatial Distribution of Emissivity. Journal of Electrotechnology, Electrical Engineering and Management (2025) Vol. 8: 150-160. DOI: http://dx.doi.org/10.23977/jeeem.2025.080118.

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